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MBRB3030CTL SWITCHMODEt Power Rectifier
These state-of-the-art devices use the Schottky Barrier principle with a proprietary barrier metal.
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Dual Diode Construction, May be Paralleled for Higher Current Output Guard-Ring for Stress Protection Low Forward Voltage Drop 125C Operating Junction Temperature Maximum Die Size Short Heat Sink Tab Manufactured - Not Sheared! Pb-Free Package is Available
SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS
1 4 3
Mechanical Characteristics
* Case: Epoxy, Molded, Epoxy Meets UL 94 V-0 * Weight: 1.7 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * *
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: Machine Model, C (>400 V) Human Body Model, 3B (>8000 V)
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4
3 D2PAK CASE 418B PLASTIC
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Per Device Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (1.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature Range Voltage Rate of Change (Rated VR, TJ = 25C) Reverse Energy, Unclamped Inductive Surge (TJ = 25C, L = 3.0 mH) Symbol VRRM VRWM VR IO IFRM Value 30 Unit V
MARKING DIAGRAM
15 30 30
A A
AY WW B3030CTLG AKA
IFSM
300
A
IRRM Tstg TJ dV/dt EAS
2.0 -55 to +150 -55 to +125 10,000 224.5
A C C V/ms mJ
A Y WW B3030CTL G AKA
= Assembly Location = Year = Work Week = Device Code = Pb-Free Package = Diode Polarity
ORDERING INFORMATION
Device MBRB3030CTL MBRB3030CTLG Package D2PAK D2PAK (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
(c) Semiconductor Components Industries, LLC, 2005
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August, 2005 - Rev. 6
Publication Order Number: MBRB3030CTL/D
MBRB3030CTL
THERMAL CHARACTERISTICS (All device data is "Per Leg" except where noted.)
Characteristic Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Case Symbol RqJA RqJC VF 0.44 0.51 IR 2.0 195 mA Value 50 1.0 Unit C/W C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TJ = 25C) (IF = 30 A, TJ = 25C) Maximum Instantaneous Reverse Current (Note 2) (Rated VR, TJ = 25C) (Rated VR, TJ = 125C) 1. Mounted using minimum recommended pad size on FR-4 board. 2. Pulse Test: Pulse Width = 250 ms, Duty Cycle 2.0%. V
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
100 TJ = 125C 10 75C 1.0 25C
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
1000
1000
100 TJ = 125C 10 75C 1.0 25C
0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
IR , MAXIMUM REVERSE CURRENT (AMPS)
1.0E+0 IR , REVERSE CURRENT (AMPS) 1.0E-1 1.0E-2 75C 1.0E-3 25C 1.0E-4 1.0E-5 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
1.0E+0 1.0E-1 1.0E-2 TJ = 125C
TJ = 125C
75C
1.0E-3 25C
1.0E-4 1.0E-5 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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MBRB3030CTL
PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) 25 dc 20 SQUARE WAVE 15 10 Ipk/Io = p Ipk/Io = 5.0 Ipk/Io = 10 5.0 FREQ = 20 kHz 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) Ipk/Io = 20 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 5.0 10 15 20 25 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 20 TJ = 125C Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p SQUARE WAVE dc
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
10,000 TJ = 25C C, CAPACITANCE (pF)
100 IPK , PEAK SURGE CURRENT (AMPS) TJ = 25C
1000
100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS)
10 0.00001 0.0001 t, TIME (seconds) 0.001 0.01
Figure 7. Typical Capacitance
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 8. Typical Unclamped Inductive Surge
1.0E+00
1.0E-01 Rtjc(t) = Rtjc*r(t)
1.0E-02 0.00001 0.0001 0.001 0.01 t, TIME (seconds) 0.1 1.0
10
Figure 9. Typical Thermal Response
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MBRB3030CTL
Modeling Reverse Energy Characteristics of Power Rectifiers
Prepared by: David Shumate & Larry Walker ON Semiconductor Products Sector
ABSTRACT Power semiconductor rectifiers are used in a variety of applications where the reverse energy requirements often vary dramatically based on the operating conditions of the application circuit. A characterization method was devised using the Unclamped Inductive Surge (UIS) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche current and inductor discharge time was established. Using this relationship and circuit parameters, the part applicability can be determined. This technique offers a power supply designer the total operating conditions for a device as opposed to the present single-data-point approach. INTRODUCTION In today's modern power supplies, converters and other switching circuitry, large voltage spikes due to parasitic inductance can propagate throughout the circuit, resulting in catastrophic device failures. Concurrent with this, in an effort to provide low-loss power rectifiers, i.e., devices with lower forward voltage drops, Schottky technology is being
applied to devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This combination of high voltage spikes and low reverse breakdown voltage devices can lead to reverse energy destruction of power rectifiers in their applications. This phenomena, however, is not limited to just Schottky technology. In order to meet the challenges of these situations, power semiconductor manufacturers attempt to characterize their devices with respect to reverse energy robustness. The typical reverse energy specification, if provided at all, is usually given as energy-to-failure (mJ) with a particular inductor specified for the UIS test circuit. Sometimes the peak reverse test current is also specified. Practically all reverse energy characterizations are performed using the UIS test circuit shown in Figure 10. Typical UIS voltage and current waveforms are shown in Figure 11. In order to provide the designer with a more extensive characterization than the above mentioned one-point approach, a more comprehensive method for characterizing these devices was developed. A designer can use the given information to determine the appropriateness and safe operating area (SOA) of the selected device.
HIGH SPEED SWITCH
CHARGE INDUCTOR
DRAIN CURRENT FREE-WHEELING DIODE + V - DRAIN VOLTAGE DUT GATE VOLTAGE INDUCTOR CHARGE SWITCH
Figure 10. Simplified UIS Test Circuit
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MBRB3030CTL
Suggested Method of Characterization Example Application
INDUCTOR CURRENT
DUT REVERSE VOLTAGE
The device used for this example was an MBR3035CT, which is a 30 A (15 A per side) forward current, 35 V reverse breakdown voltage rectifier. All parts were tested to destruction at 25C. The inductors used for the characterization were 10, 3.0, 1.0 and 0.3 mH. The data recorded from the testing were peak reverse current (Ip), peak reverse breakdown voltage (BVR), maximum withstand energy, inductance and inductor discharge time (see Table 1). A plot of the Peak Reverse Current versus Time at device destruction, as shown in Figure 12, was generated. The area under the curve is the region of lower reverse energy or lower stress on the device. This area is known as the safe operating area or SOA.
120 100 80 60 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME (s) UIS CHARACTERIZATION CURVE
TIME (s)
Figure 11. Typical Voltage and Current UIS Waveforms
Utilizing the UIS test circuit in Figure 10, devices are tested to failure using inductors ranging in value from 0.01 to 159 mH. The reverse voltage and current waveforms are acquired to determine the exact energy seen by the device and the inductive current decay time. At least 4 distinct inductors and 5 to 10 devices per inductor are used to generate the characteristic current versus time relationship. This relationship when coupled with the application circuit conditions, defines the SOA of the device uniquely for this application.
Figure 12. Peak Reverse Current versus Time for DUT
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MBRB3030CTL
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Table 1. UIS Test Data
PART NO. IP (A) 46.6 41.7 46.0 42.7 44.9 44.1 26.5 26.4 24.4 27.6 27.7 17.9 18.9 18.8 19.0 74.2 77.3 75.2 77.3 73.8 75.6 74.7 78.4 70.5 78.3 BVR (V) 65.2 63.4 66.0 64.8 64.8 64.1 63.1 62.8 62.2 62.9 63.2 62.6 62.1 60.7 62.6 69.1 69.6 68.9 69.6 69.1 69.2 68.6 70.3 66.6 69.4 ENERGY (mJ) 998.3 870.2 L (mH) 1 1 1 1 1 1 3 3 3 3 3 TIME (ms) 715 657 697 659 693 687 1 2 3 4 5 6 7 8 9 1038.9 904.2 997.3 865.0 1022.6 1024.9 872.0 1261 1262 1178 10 11 1091.0 1102.4 1316 1314 2851 3038 3092 3037 322 333 328 333 321 328 327 335 317 339 12 13 14 15 16 17 18 19 20 21 22 23 24 25 1428.6 1547.4 1521.1 1566.2 768.4 815.4 791.7 842.6 752.4 823.2 747.5 834.0 678.4 817.3 10 10 10 10 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
As an example, the values were chosen as L = 200 mH, OV = 12 V and BVR = 35 V. Figure 13 illustrates the example. Note the UIS characterization curve, the parasitic inductor current curve and the safe operating region as indicated.
120 100 80 60 40 20 SAFE OPERATING AREA 0 0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME (s) UIS CHARACTERIZATION CURVE Ipeak TIME RELATIONSHIP DUE TO CIRCUIT PARASITICS
Figure 13. DUT Peak Reverse and Circuit Parasitic Inductance Current versus Time
SUMMARY Traditionally, power rectifier users have been supplied with single-data-point reverse-energy characteristics by the supplier's device data sheet; however, as has been shown here and in previous work, the reverse withstand energy can vary significantly depending on the application. What was done in this work was to create a characterization scheme by which the designer can overlay or map their particular requirements onto the part capability and determine quite accurately if the chosen device is applicable. This characterization technique is very robust due to its statistical approach, and with proper guardbanding (6s) can be used to give worst-case device performance for the entire product line. A "typical" characteristic curve is probably the most applicable for designers allowing them to design in their own margins. References 1. Borras, R., Aliosi, P., Shumate, D., 1993, "Avalanche Capability of Today's Power Semiconductors, "Proceedings, European Power Electronic Conference," 1993, Brighton, England 2. Pshaenich, A., 1985, "Characterizing Overvoltage Transient Suppressors," Powerconversion International, June/July
The procedure to determine if a rectifier is appropriate, from a reverse energy standpoint, to be used in the application circuit is as follows: a. Obtain "Peak Reverse Current versus Time" curve from data book. b. Determine steady state operating voltage (OV) of circuit. c. Determine parasitic inductance (L) of circuit section of interest. d. Obtain rated breakdown voltage (BVR) of rectifier from data book. e. From the following relationships,
V + L @ d i(t) dt I+ (BVR * OV) @ t L
a "designer" l versus t curve is plotted alongside the device characteristic plot. f. The point where the two curves intersect is the current level where the devices will start to fail. A peak inductor current below this intersection should be chosen for safe operating.
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MBRB3030CTL
PACKAGE DIMENSIONS
D2PAK CASE 418B-04 ISSUE J
C E -B-
4
V W
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
A
1 2 3
S
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
W J
TB
M
VARIABLE CONFIGURATION ZONE L M
R
N U L
P L M
M
F VIEW W-W 1
F VIEW W-W 2
F VIEW W-W 3
SOLDERING FOOTPRINT*
8.38 0.33
10.66 0.42
1.016 0.04
5.08 0.20
3.05 0.12 17.02 0.67
SCALE 3:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRB3030CTL
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MBRB3030CTL/D

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